{"id":8316,"date":"2026-04-08T18:18:52","date_gmt":"2026-04-08T10:18:52","guid":{"rendered":"https:\/\/www.flywing-tech.com\/blog\/?p=8316"},"modified":"2026-04-08T18:18:59","modified_gmt":"2026-04-08T10:18:59","slug":"epc23101-gan-fet-pinout-features-high-efficiency-power-conversion-applications","status":"publish","type":"post","link":"https:\/\/www.flywing-tech.com\/blog\/epc23101-gan-fet-pinout-features-high-efficiency-power-conversion-applications\/","title":{"rendered":"EPC23101 GaN FET: Pinout, Features & High-Efficiency Power Conversion Applications\u00a0"},"content":{"rendered":"
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The EPC23101 is a 100 V monolithic GaN IC from Efficient Power Conversion (EPC) that integrates a high-side eGaN FET (3.3 m\u03a9 RDS(on) max \/ 2.6 m\u03a9 typical), a half-bridge gate driver, input logic interface, level shifting, and synchronous bootstrap charging \u2014 all in a single thermally enhanced QFN. Paired with the EPC2302 external low-side FET (1.4\u20131.8 m\u03a9), it forms a 65 A ePower Chipset capable of over 1 MHz switching and up to 97% efficiency in a 48 V-to-12 V buck converter within a combined 7 \u00d7 5 mm footprint. <\/p>\n\n\n\n

Important: <\/strong>the official errata limits safe operating VIN to 60 V maximum, not 100 V.

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\n EPC23101 Key Performance Parameters\n <\/caption>\n\n
Parameter<\/th>\n Value<\/th>\n <\/tr>\n <\/thead>\n\n
HS FET RDS(on) max<\/td>\n \n 3.3 m\u03a9<\/span>\n <\/td>\n <\/tr>\n\n \n
Peak efficiency @ 500 kHz<\/td>\n \n 97%<\/span>\n <\/td>\n <\/tr>\n\n \n
Max output current<\/td>\n \n 65 A<\/span>\n <\/td>\n <\/tr>\n\n \n
Max switching frequency<\/td>\n \n > 1 MHz<\/span>\n <\/td>\n <\/tr>\n <\/tbody>\n <\/table>\n\n
\n \u26a0 Note:<\/strong> These parameters are typical values at room temperature. Actual performance may vary depending on VIN, load, and PCB layout.\n <\/div>\n\n<\/div>\n\n\n\n
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